Hydrogen Peroxide H₂O₂ Electronic Grade Peroxide Solution CAS 7722-84-1
- CAS: 7722-84-1
- Synonyms: Hydrogen Dioxide, Peroxide Solution
- EINECS No.: 231-765-0
- Molecular Formula: H₂O₂
- Grade: Electronic Grade
- Packaging: 200 L Integra drum / IBC tank
Tree Chem manufactures Electronic Grade Hydrogen Peroxide (CAS 7722-84-1) under stringent purification and filtration control to meet the demanding requirements of semiconductor fabs, photovoltaic lines, and LCD/LED production. This product delivers sub-ppb level metal content, excellent decomposition stability, and high transparency. It is available in multiple grades (HP and UP series) tailored for different precision cleaning and oxidation applications.
For technical consultation or cooperation, please contact info@cntreechem.com.
Specification
Basic Information
| Parameter | Value |
| CAS Number | 7722-84-1 |
| Synonyms | Hydrogen Dioxide, Peroxide Solution |
| EINECS No. | 231-765-0 |
| Molecular Formula | H₂O₂ |
| Grade | Electronic Grade |
| Packaging | 200 L Integra drum / IBC tank |
Technical Specification
| Item | HP-1 | HP-2 | UP-1 | UP-2 | UP-3 | UP-4 |
| H₂O₂ Content (w/%) | 30–35 | 30–35 | 30–32 | 30–32 | 30–32 | 30–32 |
| Color (Hazen) ≤ | 10 | 10 | 10 | 10 | 10 | 10 |
| Free Acid (as H₂SO₄, ppm) ≤ | 30 | 30 | 30 | 30 | 10 | 10 |
| Total Organic Carbon (TOC, ppm) ≤ | 40 | 40 | 20 | 20 | 10 | 5 |
| Chloride (Cl⁻, ppm) ≤ | 0.5 | 0.5 | 0.2 | 0.2 | 0.03 | 0.03 |
| Sulfite (SO₃²⁻, ppm) ≤ | 2 | 2 | 0.4 | 0.4 | 0.03 | 0.03 |
| Phosphate (PO₄³⁻, ppm) ≤ | 1 | 1 | 0.4 | 0.4 | 0.03 | 0.03 |
| Sulfate (SO₄²⁻, ppm) ≤ | 2 | 2 | 0.2 | 0.2 | 0.03 | 0.03 |
| Aluminum (Al, ppb) ≤ | 500 | 100 | 10 | 10 | 0.1 | 0.01 |
| Arsenic (As, ppb) ≤ | 20 | 5 | 1 | 1 | 0.1 | 0.01 |
| Boron (B, ppb) ≤ | 50 | 20 | 10 | 10 | 0.1 | 0.01 |
| Barium (Ba, ppb) ≤ | 100 | 50 | 10 | 10 | 0.1 | 0.01 |
| Calcium (Ca, ppb) ≤ | 200 | 50 | 10 | 10 | 0.1 | 0.01 |
| Cadmium (Cd, ppb) ≤ | 50 | 20 | 10 | 10 | 0.1 | 0.01 |
| Chromium (Cr, ppb) ≤ | 20 | 10 | 10 | 10 | 0.1 | 0.01 |
| Copper (Cu, ppb) ≤ | 20 | 10 | 10 | 10 | 0.1 | 0.01 |
| Iron (Fe, ppb) ≤ | 100 | 50 | 10 | 10 | 0.1 | 0.01 |
| Potassium (K, ppb) ≤ | 200 | 100 | 10 | 10 | 0.1 | 0.01 |
| Magnesium (Mg, ppb) ≤ | 100 | 50 | 10 | 10 | 0.1 | 0.01 |
| Sodium (Na, ppb) ≤ | 50 | 10 | 10 | 10 | 0.1 | 0.01 |
| Nickel (Ni, ppb) ≤ | 50 | 10 | 10 | 10 | 0.1 | 0.01 |
| Strontium (Sr, ppb) ≤ | 50 | 10 | 10 | 10 | 0.1 | 0.01 |
| Tin (Sn, ppb) ≤ | 50 | 10 | 10 | 10 | 0.1 | 0.01 |
| Titanium (Ti, ppb) ≤ | 100 | 50 | 10 | 10 | 0.1 | 0.01 |
| Vanadium (V, ppb) ≤ | 50 | 10 | 10 | 10 | 0.1 | 0.01 |
| Zinc (Zn, ppb) ≤ | 100 | 50 | 10 | 10 | 0.1 | 0.01 |
| Particle Count (≥0.2 µm, pcs/mL) ≤ | — | — | 10 | 10 | — | — |
Applications
Semiconductor Manufacturing
- Electronic grade hydrogen peroxide is widely used in semiconductor cleaning and etching processes, where it plays a vital role in removing organic and metallic impurities from silicon wafers. In RCA cleaning steps, mixtures such as H₂O₂ + NH₄OH + H₂O (SC-1) effectively remove organic residues and particles, while H₂O₂ + HCl + H₂O (SC-2) eliminates metallic ions and surface oxides.
- During wet etching, hydrogen peroxide serves as a controlled oxidizing agent, forming a thin oxide layer that can be selectively removed to achieve precise microstructural control. Its high purity and stability ensure minimal particle generation and low metal contamination, meeting the demanding standards of the semiconductor industry.
Integrated Circuit (IC) and Wafer Fabrication
- In integrated circuit manufacturing, electronic grade hydrogen peroxide is used in photoresist stripping and surface conditioning. When combined with sulfuric acid (forming the Piranha solution), it rapidly oxidizes and decomposes organic residues left from photolithography processes.
- Hydrogen peroxide also assists in metal surface passivation, particularly for copper and aluminum layers, by forming uniform oxide films that protect against corrosion. Its ultra-low impurity levels and stable decomposition behavior make it ideal for advanced semiconductor nodes requiring sub-nanometer precision.
Printed Circuit Board (PCB) and Microelectronics
- In PCB production, hydrogen peroxide functions as a cleaning, etching, and oxide removal agent. In combination with sulfuric acid or persulfates, it oxidizes copper surfaces, improving the adhesion of subsequent plating layers. Hydrogen peroxide is also used in microelectronic cleaning baths to remove flux residues, oils, and organic contaminants from fine circuit lines.
- Its high decomposition stability and low metal ion content prevent unwanted electrochemical reactions, ensuring smooth and uniform surfaces. Electronic grade hydrogen peroxide enhances product reliability and extends the service life of microelectronic components.
Photovoltaic Industry
- Hydrogen peroxide is applied in the manufacturing of solar cells, particularly during wafer cleaning, texturing, and anti-reflective coating processes. It removes metallic and organic impurities from silicon wafers before coating, ensuring better light absorption and higher energy conversion efficiency.
- In high-efficiency solar cell production (such as PERC and HJT cells), hydrogen peroxide is used in advanced cleaning solutions that prevent particle contamination and surface defects, contributing to consistent photovoltaic performance.
LED and Optoelectronic Components
- Electronic grade hydrogen peroxide is crucial in the production of LED chips and optoelectronic components, where surface cleanliness directly affects optical performance. It removes trace organic films and polishing residues from sapphire, GaN, and SiC substrates.
- In metal-organic chemical vapor deposition (MOCVD) systems, hydrogen peroxide assists in chamber cleaning and component maintenance, helping to reduce contamination and improve yield rates. Its high purity minimizes residual ions that can impair optical clarity or conductivity.
Advanced Material Processing
- Hydrogen peroxide is also used in nanomaterial preparation, catalyst synthesis, and thin film fabrication. Its controlled oxidation properties enable the formation of oxide nanostructures and functional coatings. For instance, it is used in preparing TiO₂, ZnO, and graphene oxide with uniform particle sizes and controlled surface properties.
- The ultra-high purity of electronic grade hydrogen peroxide guarantees precise chemical reactions without introducing unwanted impurities, supporting innovation in advanced materials and next-generation electronics.
Storage & Handling
- Store in clean, dry, and temperature-controlled environments.
- Use dedicated equipment and pipelines made of compatible materials (e.g., HDPE, PTFE, PVDF).
- Avoid contact with metals, dust, or organic contaminants.
- Keep away from heat, sparks, and direct sunlight.
- Ensure proper grounding and closed-loop transfer systems during use.
Usage Notice
- Handle only in cleanroom or controlled environments.
- Always use dedicated containers to avoid cross-contamination.
- Do not mix with acids, bases, or reducing agents.
- Operators must wear appropriate protective equipment.
- Dispose of residues following environmental and safety regulations.
- SC-1 cleaning solution: hydrogen peroxide 30%, ammonium hydroxide 10%, water 60%; hydrogen peroxide oxidizes and removes organic residues and particles from silicon wafers.
- SC-2 cleaning solution: hydrogen peroxide 30%, hydrochloric acid 10%, water 60%; hydrogen peroxide dissolves metallic contaminants and enhances wafer surface purity.
- Piranha cleaning mixture: hydrogen peroxide 30%, sulfuric acid 70%; hydrogen peroxide oxidizes organic residues and decomposes photoresist layers in IC fabrication.
- Copper surface treatment solution: hydrogen peroxide 10%, sulfuric acid 5%, water 85%; hydrogen peroxide oxidizes copper surfaces and improves adhesion for plating.
- Photovoltaic wafer cleaning formulation: hydrogen peroxide 25%, ammonia 5%, water 70%; hydrogen peroxide removes organic impurities and enhances solar cell efficiency.
- LED substrate cleaning solution: hydrogen peroxide 15%, deionized water 85%; hydrogen peroxide eliminates polishing residues and organic films to improve optical clarity.
- Nanomaterial synthesis system: hydrogen peroxide 10%, titanium isopropoxide 2%, water 88%; hydrogen peroxide controls oxidation to form uniform TiO₂ nanoparticles.
Packaging
- 200 L Integra drum
- IBC tank (intermediate bulk container)
